High-Velocity Ballistic Impact with Boron Carbide Produces Localized Amorphization

Depressurization amorphization of single-crystal boron carbide.

We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressur...

Boron carbide/n-silicon carbide heterojunction diodes

Boron carbide nanowires with uniform CNx coatings

Boron carbide nanowires with uniform carbon nitride coating layers were synthesized on a silicon substrate using a simple thermal process. The structure and morphology of the as-synthesized nanowires were characterized using x-ray diffraction, scanning and transmission electron microscopy and electron energy loss spectroscopy. A correlation between the surface smoothness of the nanowire sidewal...

Magnetoresistance in boron carbide junctions

Irradiation-induced defect clustering and amorphization in silicon carbide

Previous computer simulations of multiple 10 keV Si cascades in 3C–SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, r...